Dr. Yu Hongyu, Professor, Dean of Shenzhen-Hong Kong School of Microelectronics, National Youth Special Expert, IET Fellow,Leading Scientific & Technical Innovation Talents of Guangdong Special Support Program. His main research  focuses on integrated circuit technology and devices, including CMOS, new ultra-high density memory, GaN Device and System integration and electronic ceramics. He published nearly 450 academic papers, of which nearly 250 have been included by SCI. The total number of citations is nearly 6100, and the H impact factor is 46. He has edited two books and contributed chapters of four professional books, published/authored nearly 28 US/European patents and more than 80 domestic patents.

Contact: yuhy@sustech.edu.cn

Education Background

· National University of Singapore (NUS), Singapore        2001.01-2004.05

       Doctor of Philosophy (Ph.D.; Dept. of Electrical & Computer Eng.)

· University of Toronto, Toronto, Canada           1999.07-2000.12

       Master of Applied Science (MASc.; Dept. of Materials Science & Eng.)

· Tsinghua University, Beijing, China             1994.09-1999.07

       Bachelor of Engineering (B.Eng.: Dept. of Materials Science & Eng.)

Professional Experience

2019.06-Present, Dean of School of Microelectronics, SUSTech

2011.10-Present, Professor, SUSTech

2008.01-2011.10, “Nanyang” Assistant Professor and Vice Director of Nano Device Lab, School of EEE, NTU

2004.05-2008.01, Senior Researcher/Technical Project Leader, IMEC, Belgium

Selected Awards

Second Prize of Innovation Award of China Invention and Entrepreneurship Award (2022)

Guangdong Province curriculum Ideological and political reform demonstration project(2021)（Introduction of Engineering）

Outstanding Scientific Research Award in South University of Science and Technology (2016)

IET Fellow (2012)

Nanyang Assistant Professorship, NTU (2008)

Highlight Paper in Symposium on VLSI Technology (2007, Kyoto, Japan)

IEEE Electron Device Society (EDS) Graduate Fellowship (2004, USA)

Research Areas

GaN power devices and system integration

CMOS devices and processes

Novel ultra-high density memories

Electronic Ceramics

Selected papers

(1)Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. "Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses", Journal of Materials Chemistry C, 2023;

(2)ChenKai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, PeiRan Wang, Qing Wang*, and Hongyu Yu*. "Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation". Applied Physics Letters, 2023, 122: 232107;

(3)JiaQi He, KangYao Wen, PeiRan Wang, MingHao He, Fangzhou Du, Yang Jiang, ChuYing Tang, Nick Tao, Qing Wang*, Gang Li*, and HongYu Yu*. "Interface charge engineering on an in-situ SiNx/AlGaN/GaN platform for normally-off GaN MIS-HEMTs with improved breakdown performance". Applied Physics Letters, 2023, 123: 103502;

(4)ChuYing Tang, Chun Fu, Yang Jiang, ChenKai Deng, KangYao Wen, JiaQi He, PeiRan Wang, Fangzhou Du, Yi Zhang, Qing Wang*, and HongYu Yu*. "Carrier transport mechanism of Mg/Pt/Au ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity". Applied Physics Letters, 2023, 123: 092104;

(5)JiaQi He, Qing Wang, Guangnan Zhou, Wenmao Li, Yang Jiang, Zepeng Qiao, Chuying Tang, Gang Li, and HongYu Yu*. "Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-Situ SiNx in Regrowth Process". IEEE Electron Device Letters, 2022, 43(4): 529–532;

(6)ChuYing Tang, HongHao Lu, ZePeng Qiao, Yang Jiang, FangZhou Du, JiaQi He, YuLong Jiang, Qing Wang, and HongYu Yu*, "Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN". IEEE Electron Device Letters, 2022, 43(9): 1412–1415;

(7)Yang Jiang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang*, HongYu Yu*. "Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance". Applied Physics Letters, 2022, 121: 212105;

(8)Guangnan Zhou, Fanming Zeng, Rongyu Gao, Qing Wang, Kai Cheng, Lingqi Li, Peng Xiang, Fangzhou Du, Guangrui Xia*, and Hongyu Yu*, "p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering". IEEE Transactions on Electron Devices, 2022, 69(5): 2282–2286;

(9)MengYa Fan, Yang Jiang, GaiYing Yang, YuLong Jiang, HongYu Yu*. "Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN". IEEE Electron Device Letters, 2020, 41(10):1484-1487;

(10)MengYa Fan, GaiYing Yang, GuangNan Zhou, Yang Jiang, WenMao Li, YuLong Jiang, HongYu Yu*, "Ultra-Low Contact Resistivity of < 0.1 Omega mm for Au-Free TixAly Alloy Contact on Non-Recessed i-AlGaN/GaN". IEEE Electron Device Letters, 2020, 41(1): 143-146.