Dr. Guobiao (George) Zhang, currently is research professor at the School of  Microelectronics, Southern University of Science and Technology, and the executive director of Engineering Research Center of Three Dimensional Integration in Guangdong Province. He received a Ph.D degree in Physics from the University of California, Berkeley (1995) under Chenming Hu. He has worked in the semiconductor field for more than 20 years. Dr. Zhang is a pioneer in 3-D integration, including 3-D memory and 3-D computing. He owns >180 patents (>120 US patents and >60 Chinese patents). Under a license from Dr. Zhang, Matrix Semiconductor mass-produced a first 3-D memory in the industry. Intel`s 3D-XPoint and YMTC`s Xtacking used Dr. Zhang`s patents. Dr. Zhang and the team won championship in the Electronic Information Industry category during the 4th National Innovation and Entrepreneurship Competition - the highest-level Innovation and Entrepreneurship Competition in China.

Hiring

Prof. Guobiao (George) Zhang welcomes individuals passionate in research to join his research group. He has openings for Research Assistant Professor, Postdoctoral Fellows, Research Assistants, Graduate Students, as well as Internships. Interested individuals are invited to email a copy of his/her CV to his email address, with subject titled “Research position application <Position, Name>”.

Contact：zhanggb@sustech.edu.cn

Educational Background

1990 to 1995, University of California, Berkeley, Physics, PhD

1986 to 1990, Juvenile Class, University of Science and Technology of China, Modern physics, Bachelor

Professional Experience

2019 to present, Southern University of Science and Technology, Research Professor

2001 to 2019, 3D-ROM Company, USA, Principal Scientist

1996 to 2001, ,Texas Instruments, Senior Design Engineer

Awards

Championship in the Electronic Information Industry category during the 4th National Innovation and Entrepreneurship Competition - the highest-level Innovation and Entrepreneurship Competition in China

Research Interest

3-D integration, including 3-D memory and 3-D computing

Representative licensed patent

1． US 11,068,771，2021/7/20，Integrated Neuro-Processor Comprising Three-Dimensional Memory，Guobiao ZHANG

2．US 11,055,606，2021/7/6，Vertically Integrated Neuro-Processor，Guobiao ZHANG

3．ZL 201710130887.X ，2021/6/18，含有三维存储阵列的分布式模式处理器，张国飙

4．US 10,937,834，2021/3/2，Shared Three-Dimensional Vertical Memory，Guobiao ZHANG

5．ZL 201710241669.3，2021/1/8，含有三维存储阵列的处理器，张国飙,沈忱

6．US 10,848,158，2020/11/24，Configurable Processor，Guobiao ZHANG

7．ZL 201710461236.9，2020/11/10，兼具数据分析功能的大数据存储器，张国飙

8．ZL 201710460367.5，2020/11/10，兼具图像识别功能的存储器，张国飙

9．US 10,763,861，2020/9/1，Processor Comprising Three-Dimensional Memory (3D-M) Array, Guobiao ZHANG, Chen SHEN

10．US 10,560,475，2020/2/11，Processor for Enhancing Network Security，Guobiao ZHANG

11．10,489,590，2019/11/26，Processor for Enhancing Computer Security，Guobiao ZHANG

12．ZL 201510226777.4，2018/10/19 ，电压产生器分离的三维纵向存储器，张国飙

13．ZL 201510228946.8，2018/10/19，地址/数据转换器分离的三维纵向存储器，张国飙

14．US 9,838,021，2017/12/5，Configurable Gate Array Based on Three-Dimensional Writable Memory，Guobiao ZHANG

15．ZL 201510090124.8，2017/11/10，紧凑型三维存储器，张国飙

16．US 9,666,641，2017/5/30，Compact Three-Dimensional Memory，Guobiao ZHANG

17．ZL 201280042089.7，2016/3/30，分离的三维存储器，张国飙

18．ZL 201310091513.3，2015/9/2，小晶粒三维存储器，张国飙

19．US 9,123,393，2015/9/1，Discrete Three-Dimensional Vertical Memory，Guobiao ZHANG

20．US 7,386,652，2008/6/10，User-Configurable Pre-Recorded Memory，Guobiao ZHANG 

21．ZL 01129103.6，2008/5/14，三维只读存储器集成电路，张国飙

22．ZL 02131089.0，2006/11/15，三维集成存储器，张国飙

23．US 6,717,222，2004/4/6，Three-dimensional memory，Guobiao ZHANG

24．ZL 98119572.5，2003/1/22，三维只读存储器及其制造方法，张国飙

25．US 5,835,396，1998/11/10，Three-dimensional read-only memory，Guobiao ZHANG