Junrui Zhang, received the B.S. and M.S. degree from University of Electronic Science and Technology of China, and PhD degree from Ecole Polytechnique Federale de Lausanne. From November 2019 to May 2021, he worked for Xsensio SA (Switzerland) as an IC engineer and developed micro/nano-engineering process for biosensing platforms. From June 2021 to April 2022, he worked for China Academy of Engineering Physics on process development for RF system heterogeneous integration. 

Education

PhD                   July 2014 – Aug 2019

École Polytechnique Fédérale de Lausanne           Lausanne, Switzerland

Thesis: Wearable System for Real-Time Sensing of Biomarkers in Human Sweat.

Master                  Sept 2010 – July 2013

University of Electronic Science and Technology of China        Chengdu, China

Thesis: Ultra-wideband Reconfigurable Antenna Array

Bachelor                 Sept 2006 – July 2010

University of Electronic Science and Technology of China        Chengdu, China

Working and Research Experience

Associate Researcher              April 2022 – Now

Southern University of Science and Technology         Shenzhen, China

Associate Researcher                  June 2021 – April 2022

China Academy of Engineering Physics            Mianyang, China

Integrated Circuits Engineer                 Nov 2019 – May 2021

Xsensio SA                Lausanne, Switzerland

Publications

1. Zhang Junrui; Bellando Francesco; Garcia Cordero Erick; Ionescu Mihai Adrian ; Field Effect Transistor Device or Sensor for Sensing Ions, Molecules or Biomarkers in a Fluid, 2021, US2021270770A1

2. Wildhaber Fabien Patrick; Zhang Junrui; Guerin Hoel Maxime; Joho Marc; Clement Pietro; Tonione Raphael Philippe ; Wearable Systems for Measuring Sweat Rate and Methods of Using the Same, 2021, WIPO, WO2021099610A1.

Selected Publications 

1. Bellando F, Mele LJ, Palestri P, Zhang J, Ionescu AM, Selmi L. Sensitivity, “Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications,” Sensors. 2021; 21(5):1779.

2. Sheibani, S., Capua, L., Kamaei, S., Sayedeh Shirin Afyouni Akbari, Junrui Zhang, Hoel Guerin, Adrian M. Ionescu, “Extended gate field-effect-transistor for sensing cortisol stress hormone,” Communication Materials 2021, 2, 10.

3. M. Rupakula, Junrui Zhang, et al., "Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 773-779, 2020.

4. Zhang Junrui*, et al., “Sweat Biomarker Sensor Incorporating Pico-Watt, 3D-Extended Metal Gate ISFETs,” ACS Sensors, 2019, 4(8): 2039-2047.

5. Zhang Junrui*, et al., “All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing,” IEDM 2018, San Francisco, CA.

6. Garcia-Cordero Erick, Bellando Francesco, Zhang Junrui, et al. “Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers,” ACS Nano, 2018.