Professor Aimin Song received PhD degree from the Chinese Academy of Sciences in 1995. After three years of fellowships at University of Glasgow and University of Munich sponsored by the Royal Society and von Humboldt foundation, he worked at Lund University as a Guest Lecturer before moving to Manchester as a Lecturer in 2002. He became Professor of Nanoelectronics in 2006. His research is focused on novel nanoelectronic devices, oxide semiconductor thin-film electronics, low-power electronic displays, high-speed electronic devices, etc. His work has led to awards including a "Researcher of the Year" Distinguished Achievement Medal of the University of Manchester and a Royal Society Brian Mercer Feasibility Award. The novel device concepts that he developed were at the centre of two EU Framework Projects. He has published more than 200 SCI papers, participated in the writing of 6 books, and delivered more than 100 invited/keynote talks at international conferences. He has been selected for many years in Elsevier's "Highly Cited Chinese Reseachers" and "Stanford University Top 2% Scientists List".

Research Interests

• Novel nanoelectronic devices

• Oxide semiconductor thin-film electronics

• Low-power electronic displays

• High-speed electronic devices

Educational Background

9/1985 to 6/1989 B.Sc. Physics Department, Shandong University, Jinan, China

9/1989 to 6/1992 M.Sc. Institute of semiconductors, Chinese academy of sciences

9/1992 to 2/1995 Ph.D. Institute of semiconductors, Chinese academy of sciences

Appointments held

Royal Society Postdoc Fellow, University of Glasgow, U.K. (1995.10)

A. von Humboldt Postdoc, Universität München, Germany (1996.10)

Guest Lecturer, Lund University, Lund, Sweden (1998.10)

Lecturer, University of Manchester, U.K. (2002.3)

Senior Lecturer, University of Manchester, U.K. (2005.8)

Professor of Nanoelectronics, University of Manchester, U.K. (2006.5)

Distinguished Professor, Shandong University, China (2012.1 )

Chair Professor, SUSTech, China (2024.1)

Peer reviewed journal articles

• Multivalued Logic Circuit Based on a Bilayer Graphene Resonant Tunneling Transistor, Z Zhang, B Zhang, Z Cheng , H Han, Q Xin , J Zhang ,A Song , IEEE Electron Device Letters, 46 (11), 2189 (2025)

• Fully screen-printed paper-based ZnO synaptic transistor arrays for visual perception and neuromorphic computing, X Li, L Yi, X Yin, J Cheng, Q Xin, A Song, npj Flexible Electronics, 9 (1), 57 (2025)

• Large-Scale and Ultraclean Dry Transfer of Two-Dimensional Materials via Liquid Nitrogen-Assisted Cryogenic Exfoliation, X Zheng, L Han, S Fatima, S Khan, Y Sun, Z Li, Y Ning, K Leifer, G Zhu, H Li, A Song, Nano Letters ,25(25),  9967–9975 (2025)

• Superior self-powered infrared photodetector via semiconducting graphene-nanoribbons-based vertical heterojunctions, Y Sun, M Wang, X Zheng, Z Li, N Han, M Li, Z Wang, L Han, Y Ning, H Li, A Song, Applied Physics Reviews, 12 (2), (2025)

• Paper-based degradable, label-free microRNA sensing platform based on oxide thin-film transistor arrays, X Yin, Q Guo, X Ji, X Li, H Xue, Q Xin, J Zhang, Z Yan, A Song, Biosensors and Bioelectronics, 277, 117291 (2025)

• Toward high-current-density and high-frequency graphene resonant tunneling transistors, Z Zhang, B Zhang, Y Zhang, Y Wang, P Hays, SA Tongay, M Wang, H Han, H Li, J Zhang, A Song, Nature Communications, 16 (1), 4805 (2025)

• Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment, S Zheng, C Wang, S Lv, L Dong, Z Li, Q Xin, A Song, J Zhang, Y Li, Nanomaterials, 15 (6), 460 (2025)

• Electro-Optical InGaZnO Synaptic Transistor with Solid State Electrolyte for Pain Perception, X Li, X Ji, X Yin, Z Ding, N Wang, Y Li, J Zhang, Q Xin, A Song, Advanced Electronic Materials, 11 (2), 2400356 (2025)

• Very High-Gain, High-Yield Oxide Thin-Film Amplifiers Enabled by Full Etching Processes, IEEE Transactions Electron Devices, 72(10), 5442 (2025)

• Enhanced Carrier Transport and Stability in Thin-Film Transistors Based on ITZO/IGZO Heterojunction Channel and Al2O3 Passivation, ACS Applied Electronic Materials, 7(18) , 8322-8330 (2025)

• Gate-Tunable Synaptic Transistors Based on P-Type SnO for Complementary Neuromorphic System, Y Yuan, G Li, D Ge, T Liu, Q Xin, A Song, IEEE Transactions Electron Devices, 72 (11), 6315 (2025)

• High-Gain CMOS-Like Inverters Based on F-Plasma-Treated Ambipolar SnO Thin-Film Transistors, Z Gao, P Dai, N Wang, Y Yao, J Song, J Xiang, Y Wang , J Zhang , Y Li , Q Xin , A Song, IEEE Transactions Electron Devices, 72 (9), 4976 (2025)

• Graphene-Manipulated Terahertz Zigzag Electromagnetically Induced Transparency Metasurface on Liquid Crystal Polymer Film, X Wang, Z Li, J Song, H Ling, Y Shi, X Zhang, B Zhang, A Song, Y Zhang, Advanced Optical Materials,  e00523 (2025)

• Tailoring Al2O3 deposition temperature for enhanced electrical performance and reliability of IGZO thin-film transistors, S Lv, X Li, S Zheng, T Zhang, B Zhang, Y Lin, Y Wang, F Wang, Q Xin, Y Li, Semiconductor Science and Technology, 40 (9), 095008 (2025)

• Oxide Thin-Film Transistor and Circuit Modeling Using Artificial Neural Network, L Huang, Z Wang, Z Cheng, T Wei, J Zhang, A Song, IEEE Transactions on Electron Devices, 72 (9), 5011 (2025)