Intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy

Abstract:

Quantum anomalous Hall effect is a quantum Hall effect that can occur even at zero magnetic field. The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall effect as well as other novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy-grown MnBi2Te4 thin films even close to the quantized regime, setting a big barrier for constructing fascinating heterostructures for various quantum effects and applications. In this talk, I will introduce our effort and progress in past years on approaching the quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films. I will also discuss how to achieve high temperature quantum anomalous Hall effect in MnBi2Te4-based materials and structures.

Bio:

Prof. Ke He graduated from Department of Physics, Shandong University in 2000, and received his PhD in 2006 in Institute of Physics, Chinese Academy of Sciences (IOP, CAS). After that, he worked as a postdoc in the University of Tokyo, first in the Department of Physics and then in the Institute of Solid State Physics, for three years in total. From 2009 to 2013, he was an associate professor of IOP, CAS. He joined Department of Physics, Tsinghua University in 2013 and became a full professor since 2016. His research focuses on molecular beam epitaxy growth of low-dimensional topological materials and experimental studies on the topological quantum effects in them. Professor He made great contributions in the first experimental realization of the quantum anomalous Hall effect. He received Nishina Asia Award in 2015, Yeh Chi-Sun Prize in Physics in 2017, and the First-Class National Natural Science Award of China in 2018.