宽禁带半导体（如GaN, SiC, Ga2O3）器件可以突破传统硅基器件的理论极限，是新⼀代电⼒电⼦器件的重要发展⽅向。化梦媛博士致力于宽禁带半导体器件与IC研究，在高端制造工艺、测试表征技术、器件结构设计、可靠性等方面做出一系列原创性和系统性的工作。共发表国际高水平期刊与会议论文90余篇，引用超1900次，h因子22。成果包括国际电子器件领域的顶级峰会IEEE IEDM论文7篇，电力电子领域旗舰会议IEEE ISPSD论文11篇，为国际会议做邀请报告10余次；发表器件领域顶级期刊IEEE Electron Device Lett. 15篇，IEEE Trans. Electron Devices 8篇，多次选入热点论文，被产业界权威杂志专题报道。获2020年IEEE ICSICT杰出青年科技论文奖；获2017年IEEE ISPSD最佳青年学者奖；现任国际高水平期刊IEEE Trans. Electron Devices编辑。申请发明专利6项，主持省部级项目2项。

教育经历

2013-2017：香港科技大学，电子与计算机工程系，博士学位

2009-2013：清华大学，数学物理基础科学班，学士学位

工作经历

2018.09-至今：南方科技大学，电子与电气工程系，助理教授

2017.09-2018.09： 香港科技大学，电子与计算机工程系，博士后

研究简介

·  宽禁带半导体器件

·  氮化镓电⼒电⼦器件

·  半导体器件⼯艺

·  半导体器件物理

·  可靠性

·  功率集成电路

·  新一代小型化电源应用

所获荣誉

· IEEE ICSICT “杰出青年科技论文奖” , 2020

· 深圳市海外⾼层次⼈才“孔雀计划”，2019

· IEEE TED⾦牌审稿⼈，2018-2021

· IEEE EDL⾦牌审稿⼈，2019-2021

· IEEE ISPSD “最佳青年学者奖” （年度唯一获奖人），2017

代表文章

1. Jiang, L. Li, C. Wang, J. Ma, Z. Liu, and M. Hua*, “Gate-stress Induced Threshold Voltage Instability in GaN HEMT with PNJ-gate”, IEEE Transactions on Electron Devices, vol. 69, no. 7, pp. 3654-3659, July 2022, doi: 10.1109/TED.2022.3177397.

2. Jiang, M. Hua*, X. Huang, L. Ling, C. Wang, J. Chen and Kevin J. Chen, "Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs," IEEE Transactions on Power Electronics, vol. 37, no. 5, pp. 6018-6025, May 2021, doi: 10.1109/TPEL.2021.3130767.

3. Zhao, J. Byggmästar, Z. Zhang, F. Djurabekova, K. Nordlund, and M. Hua*, “Phase transition of two-dimensional ferroelectric and paraelectric Ga2O3monolayers: A density functional theory and machine learning study”, Phys. Rev. B, vol. 104, no. 5, p. 054107, Aug. 2021, doi: 10.1103/PhysRevB.104.054107.

4. Hua*, J. Chen, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, and Kevin J. Chen, "E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability," in 2021 IEEE 14thInternational Conference on ASIC (ASICON), 2021, pp. 1-4, doi: 10.1109/ASICON52560.2021.9620369 (invited talk)

5. Jiang, M. Hua*, X. Huang, L. Li, J. Chen and K. J. Chen, "Impact of OFF-state Gate Bias on Dynamic RONof p-GaN Gate HEMT," in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 47-50, doi: 10.23919/ISPSD50666.2021.9452256.

6. Zhao, H. Huang, Y. Yin, Y. Liao, H. Mo, Q. Qian, Y. Guo, X. Chen, Z. Zhang, and M. Hua*, "Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application," The Journal of Physical Chemistry Letters, 2021, vol. 12, pp. 5513-5820, doi: 10.1021/acs.jpclett.1c01393. (cover letter)

7. Chen, M. Hua*, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, and Kevin J. Chen, “Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs”, IEEE Electron Device Letters, 2021, doi: 10.1109/LED.2021.3077081.

8. Hua*, C. Wang, J. Chen, J. Zhao, J. Wei, L. Zhang, S. Yang, and Kevin J. Chen, “Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT”, IEEE Electron Device Letters, vol. 42, no. 5, pp. 669-672, May 2021, doi: 10.1109/LED.2021.3068296.

9. Hua*, J. Chen, C. Wang, L. Liu, J. Wei, L. Zhang, Z. Zheng, and Kevin J. Chen, “E-mode p-FET-bridge HEMT for Higher VTH and Enhanced Stability”, in 2020 IEEE International Electron Devices Meeting (IEDM), 2020.

10. Chen, M. Hua*, J. Jiang, J. He, J. Wei, and Kevin J. Chen, "Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNxGate Dielectric," in 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-7, 2020.

11. Wang, M. Hua*, S. Yang, L. Zhang, and Kevin J. Chen, "E-mode pn Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability,"  in 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-7, 2020.

12. Hua*, C. Wang, J. Chen, L. Zhang, Z. Zheng and K. J. Chen, "Gate Reliability and VTHStability Investigations of p-GaN HEMTs," in 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), Kunming, China, 2020, pp. 1-4, doi: 10.1109/ICSICT49897.2020.9278305. (invited talk)

13. Chen,M. Hua*, J. Wei, J. He, C. Wang, Z. Zheng, and K. J. Chen, " OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs,"  IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 3, pp. 3686-3694, June 2021, doi: 10.1109/JESTPE.2020.3010408.

14. Wang, M. Hua*, J. Chen, S. Yang, Z. Zheng, J. Wei, L. Zhang, and K. J. Chen, "E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs," IEEE Electron Device Letters, vol. 41, no. 4, pp. 545-548, April 2020, , doi: 10.1109/LED.2020.2977143.

15. Hua, J. Wei, Q. Bao, Z. Zhang, Z. Zheng, and K. J. Chen, "Dependence of VTHStability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET," IEEE Elec. Dev. Lett., vol. 39, no. 3, pp. 413–416, Jan. 2018.

16. Hua, J. Wei, G. Tang, Z. Zhang, X. Cai, N. Wang, and K. J. Chen, "Normally-off LPCVD-SiNx/GaN MIS-FET with Crystalline Oxidation Interlayer,"IEEE Elec. Dev. Lett., vol. 38, no. 7, pp. 929–932, Jul. 2017.

17. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Compatibility of AlN/SiNxPassivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT," IEEE Elec. Dev. Lett., vol. 37, No. 3, pp. 265-268, 2016.

18. Hua,X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. J. Chen, ‘Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1-x Channel’, in 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp. 30.3.1-30.3.4.

19. Hua, J. Wei, Q. Bao, Z. Zhang, J. He, Z. Zheng, J. Lei, and K. J. Chen, "Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs," 2017 Int. Electron Device Meeting (IEDM 2017), San Francisco, CA, USA, Dec. 2-6, 2017.

20. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Integration of LPCVD-SiNxGate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime," 2016 Int. Electron Device Meeting (IEDM 2016), San Francisco, CA, USA, Dec. 5-7, 2016.

招聘信息

本课题组目前正在招聘研究助理教授、博士后、科研助理、博士生、硕士生，同时欢迎来自国内外的优秀访问学者和交流学生，有意加入者请将简历发送至：huamy@sustech.edu.cn。

联系方式

地址：深圳市南山区南方科技大学工学院南楼226

电邮：huamy@sustech.edu.cn