师资

汪青
研究副教授
wangq7@sustech.edu.cn

汪青博士,南方科技大学深港微电子学院研究副教授、博士生导师,兼任学院党支部书记,深圳市高层次人才,先后主持或主研了国家自然科学青年科学基金项目、中国博士后科学基金面上项目、“十三五”国家重点研发计划、广东省重点领域研究计划以及深圳市基础研究重点项目等10余项国家、省部和市级项目,发表SCI/EI论文30余篇,撰写专业英文著作重要章节,授权/申请国内发明专利40余项和PCT专利4项,参与撰写氮化镓微波射频技术路线图(2020版),主要研究方向为GaN功率器件和射频器件,综合设计及制备适用于5G通讯、智能电网和新能源汽车等领域的GaN基器件及系统。 

 

教育经历

2013年,华南理工大学,材料物理与化学,博士

2008年,西南大学,材料物理与化学系,学士

 

工作经历

2020/7-至今,南方科技大学,深港微电子学院党支部书记

2019/4-至今,南方科技大学,研究副教授

2013/7-2019/1,东莞市中镓半导体科技有限公司,历任研发中心高级工程师、事业部副经理、研发部经理和制造部主任

2013/9-2016/5,中山大学,企业博士后

 

研究领域

GaN功率器件及电源系统

GaN射频器件及PA模块

 

所获荣誉

2021年,深圳市高层次人才

2021年,南方科技大学工学院“优秀共产党员”

2019年,第三代半导体产业技术创新战略联盟“年度突出贡献奖”

2017年,广东光大集团年度优秀管理者

2016年,东莞市高层次人才 

 

代表性项目

2021.8-2024.8, 深圳市基础研究重点项目,合作单位负责人,排名第一,经费:250万。

2021.2-2021.12,  900V耐压GaN功率器件研发,横向项目,项目主持,排名第一,经费:200万。

2020.11-2023.3, 深圳市基础研究重点项目,项目骨干,排名第二,经费:250万。

2018.1-2020.1, 国家自然科学委员会青年科学基金,项目主持,排名第一,经费:24万,已结题。

2014.9-2016.5, 中国博士后科学基金项目,项目主持,排名第一,经费:5万,已结题。

2014.10-2017.9, 广东省公益研究与能力建设专项项目,项目负责人,排名第一,经费:200万,已结题。

2017.7-2020.12,“十三五”国家重点研发计划,项目骨干,子课题副组长,排名第二,经费:200万。

2014.1 -2017.12,国家自然科学基金委员会面上项目,项目第一参与者,排名第二,经费:80万,已结题。

 

代表专利

1. 一种用于GaN生长的具有隔离保护层的复合衬底制备方法,授权发明专利

2. 一种用于GaN生长的低应力状态复合衬底的制备方法,授权发明专利

3. 一种用于GaN生长的低应力状态复合衬底,授权发明专利

4. 一种GaN基复合衬底的制备方法,授权发明专利

5.  一种提高有机电致发光器件性能的阳极修饰方法,授权发明专利

6. 片外大功率输出级最佳直流偏置的自适应校准电路,PCT专利,审中。

7. 一种应用于单工通信的可重构高精度模_数,数_模转换器,PCT专利,审中。

8. 兰姆波谐振器及其制备方法,PCT专利,审中。

9. 一种InAlN射频器件的制备方法,PCT专利,审中。

10. 无金欧姆接触电极、半导体器件和射频器件及其制法,发明专利,审中。

11. 一种p型氮化镓基器件的电极及其制备方法和用途,发明专利,审中。

12. P型氮化镓基器件、其欧姆接触系统、及其电极制备方法,发明专利,审中。

13. 一种图形化欧姆接触电极的制备方法,发明专利,审中。

14. 一种气体传感器及其制备方法,发明专利,审中。

15. 一种体声波谐振器的制备方法,发明专利,审中。

16. 一种氮化镓气体传感器的集成方法,发明专利,审中。

17. 一种p型氮化镓基器件的电极及其制备方法和用途,发明专利,审中。

18. 一种氧化镓晶体管的制作方法,发明专利,审中。

19. 半导体外延结构、制备方法结构及半导体器件,发明专利,审中。

20. 一种高速可控多模式的伪随机信号发生器架构,发明专利,审中。

21. 一种III族氮化物晶体管外延结构及晶体管器件,发明专利,审中。

22.  一种GaN HEMT 器件的制备方法,发明专利,审中。

23. 半导体器件场板的制作方法,发明专利,审中。

24.  半导体器件的制作方法,发明专利,审中。

25. 一种E/D-mode GaN HEMT集成器件的制备方法,发明专利,审中。

26. 新型连续时间线性均衡器架构,发明专利,审中。

27. 一种GaN器件及其制备方法,发明专利,审中。

28. 一种GaN HEMT射频器件的制备方法,发明专利,审中。

 

代表性论文:

1. Wang Qing, Liang Zhiwen, Wang Qi*, & Zhang Guoyi. (2020). Fabrication of a thermostable Ga-face GaN template on a molybdenum substrate via layer transfer. Optical Materials Express, 10(10), 2447-2455.

2. He Jiaqi, Cheng Wei-Chih, Jiang Yang, Fan Mengya, Zhou Guangnan, Yang Gaiying, Jiang Lingli, Wang Xiang, Wu Zhanxia, Wang Qing*, Yu Hongyu*. Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps[J]. Materials Science in Semiconductor Processing, 2021, 132(6798):105907.

3. Cheng WeiChih, Zeng Fanming, He Minghao, Wang Qing*, ChanMansun,&YuHongyu*. (2020). Quasi-Normally-Off AlGaN/GaN HEMTs with SiN Stress Liner andComb Gate for Power Electronics Applications. Ieee Journal Of The Electron Devices Society,8, 1138-1144.

4. Cheng WeiChih, Zhou Guangnan, Zeng Fanming, Jiang Yang, Jiang Lingli, Wang Qing* &Yu Hongyu*. (2020). Technological Development in Pursuit of High-Performance Normally-off GaN-based HEMTs. 2020 Ieee 15th International Conference On Solid-state And Integrated Circuit Technology, Icsict 2020 - Proceedings.

5. Hu Qiaoyu, Zeng Fanming, Cheng Wei Chih, Zhou Guangnan, Wang Qing*, Yu Hongyu*. (2020). Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations. Proceedings Of The International Symposium On The Physical And Failure Analysis Of Integrated Circuits, Ipfa, 2020-July.

6. Jiang Yang , Wan Ze Yu , Zhou Guang Nan , Fan Meng Ya , Yang GaiYing , Sokolovskij R, Xia Guang Rui , Wang Qing* &Yu Hong Yu*. (2020). A Novel Oxygen-Based Digital Etching Technique for p-GaN/AlGaN Structures without Etch-Stop Layers. Chinese Physics Letters, 37(6).

7. Jiang Yang, Qiao Zepeng, Du Fangzhou, Yang Gaiying, Fan Mengya, Tang Xinyi, Wang Qing* and Yu Hongyu*. "Achieving A Low Contact Resistivity of 0.11 Ω·mm for Ti5Al1/TiN S/D Contact on Al0.2Ga0.8N/ AlN/GaN Structure without Barrier Recess," 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, pp. 1-3.

8. He, Jiaqi, Cheng Wei-Chih, Jiang Yang, Wang Qing*, Yu Hongyu*. "Study of bilayer Al2O3/in-situ SiNx dielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs," 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, pp. 1-3.

9. Zeng Fanming , Wang Qing , Lin Shuxun , Wang Liang Zhou Guangnan,  Cheng Wei-Chih, He Minghao, Jiang Yang, Ge Qi, Li Ming & Yu Hongyu*. (2020). Study on the Optimization of Off-State Breakdown Performance of p-GaN HEMTs.

10. Zhou, Guangnan, Zeng Fanming, Jiang Yang, Wang Qing ,Jiang Lingli ,Xia Guangrui* and Yu Hongyu*. "Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements," in IEEE Transactions on Electron Devices, vol. 68, no. 4, pp. 1518-1523, April 2021.

11. He Minghao,Cheng Wei-Chih, Zeng Fanming,Qiao Zepeng, Chien Yu-Chieh,Jiang Yang,Li Wenmao, Jiang Lingli, Wang Qing ,Ang Kah-Wee* and Yu Hongyu*. Improvement of β -GaO MIS-SBD Interface Using Al-Reacted Interfacial Layer[J]. IEEE Transactions on Electron Devices, 2021, PP(99):1-6.

12. Zhou Guangnan, Jiang Yang, Yang Gaiying,Wang Qing,Fan Mengya, Jiang Lingli,Yu Hongyu* and Xia Guangrui*. Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs[J]. AIP Advances,2021,11(4).

13. Yin Jiahao, Chen Liang, Luo Yumeng, Wang Qing,Yu Hongyu*, Li Kwai Hei*. "Performance of InGaN green light-emitting diodes with on-chip photodetectors based on wire-bonding and flip-chip configurations," Appl. Opt. 60, 2599-2603 (2021).

14. He Jiaqi, Cheng Wei-Chih,Wang Qing, Cheng Kai, Yu Hongyu*, and Chai Yang *. Recent Advances in GaN-Based Power HEMT Devices[J]. ADVANCED ELECTRONIC MATERIALS,2021,7(4).

15. Yin Jiahao , An Xiaoshuai ,Chen Liang, Li Jing, Wu Jianan, Luo Yumeng, Wang Qing, Yu Hongyu and Li, Kwai Hei*. "Phosphor-Based InGaN/GaN White Light-Emitting Diodes With Monolithically Integrated Photodetectors," in IEEE Transactions on Electron Devices, vol. 68, no. 1, pp. 132-137, Jan. 2021.

16. Tang Chuying, Yu Hongyu, Sun Chengliang, Zhang Yi, Wang Liang, Cai Yao,  Wu Jingyi, Wang Qing, Liu Sheng *.Investigation on the release of residual stress in a folded structure applied to MEMS devices[J]. Micro and Nano Letters,2021,16(9).

17. Zhang Yi, Wang Liang, Zou Yang, Xu Qinwen, Liu Jieyu, Wang Qing, Tovstopyat Alexander, Liu Wenjuan, Sun  Chengliang*, Yu Hongyu*. "Lithium Niobate Thin Film Based A3 Mode Resonators with High Effective Coupling Coefficient of 6.72%," 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS), 2021, pp. 466-469.

18. Cheng Wei-Chih, He Minghao, Lei Siqi, Wang Liang, Wu Jingyi, Zeng Fanming, Hu Qiaoyu, Wang Qing, Chan Mansun, Xia Guangrui (Maggie)* &Yu Hongyu*.(2020). Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiNx stressors. Semiconductor Science And Technology, 35(4).

19. Tang Chuying, Wang Liang, Cai Yao, Zhang Yi, Wang Qing, Liu Sheng* &Yu Hongyu*. (2020). Residual Stress Analysis and Structural Parameters Optimization of Corrugated Diaphragms Applied to MEMs Device. 4th Electron Devices Technology And Manufacturing Conference, Edtm 2020 - Proceedings.

20. He Minghao, Zeng Fanming, Cheng Wei Chih, Wang Qing, Yu Hongyu*&Ang Kah Wee*. (2020). Beta-Ga2O3MOSFET Device Optimization via TCAD. 4th Electron Devices Technology And Manufacturing Conference, Edtm 2020 - Proceedings.

21. Cheng Wei-Chih, He Minghao, Zeng Fanming, Wang Qing, Chan Mansun & Yu Hongyu*.(2020). Quasi-Normally-Off AlGaN/GaN HEMTs with Strained Comb Gate for Power Electronics Applications.  

22. Qing Wang, Yan Zhou, Hua Zheng, Jian Shi, Chunzeng Li, Chanmin Q.Su, Lei Wang, Chan Luo, Diangang Hu, Jian Pei, Junbiao Peng, Yong Cao, Modifying Organic/metal interface via Solvent Treatment to Improve Electron Injection in Organic Light-Emitting Diodes. Organic Electronics, 12(2011)1858-1863.

23.  Qing Wang, Yanwen Chen, Yina Zheng, Na Ai, Shaohu Han, Wei Xu, Zhixiong Jiang, Yanhong Meng, Diangang Hu, Junbiao Peng, Jian Wang, Yong Cao. Solvent Treatment as an Efficient Anode Modification Method to Improve Device Performance of Polymer Light-Emitting Diodes. Organic Electronics, 14(2013)548-553.

24.  Qing Wang, Yang Liu, Yongjian Sun, Yuzhen Tong, Guoyi Zhang. Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process. Journal of Semiconductors, 2016.3.9.

25. Hua Zheng, Yina Zheng, Nanliu Liu, Na Ai, Qing Wang, Sha Wu, Junbiao Peng, Yong Cao. All-Solution Processed Polymer Light-Emitting Diode Displays. Nature Communication, 4(2013)1971-1976.

 

代表著作:

1. 英文著作: Wang Qing, Yu Gang, Wang Jian, Organic Light-Emitting Materials and Devices (第一章), CRC Press, ISBN-13: 978-1-4398-8223-8, 2015.