蔡月飞博士于2022年7月加入南方科技大学电子与电气工程系，主要从事宽禁带半导体的研究，包括氮化镓电子器件和光电子器件的设计、制备、表征和单片集成。目前已在化合物半导体领域的顶级国际会议IWN，ICNS和CSW上做口头报告3次，在ACS Nano, ACS Photonics, IEEE EDL, APL等高水平期刊上发表论文20余篇，其成果得到了国际知名科技媒体IEEE Spectrum, Semiconductor Today和Compound Semiconductor的专题报道, 也获得了内外同行的高度评价。此外还担任Photonics Research、Nature Electronics等期刊的审稿人，是IEEE高级会员、Optica会员。
教育经历
2013.09-2018.06 香港科技大学，电子与计算机工程系，工学博士
2011.09-2013.07 哈尔滨工业大学，物理电子学，工学硕士
2007.09-2011.07 哈尔滨工业大学，电子科学与技术，工学学士
工作经历
2022.07- 至今 南方科技大学，电子与电气工程系，助理教授
2021.09-2022.07 嘉庚创新实验室，厦门市未来显示技术研究院，副研究员
2018.03-2021.06 英国谢菲尔德大学，电子与电气工程系，博士后副研究员
研究简介
宽禁带半导体器件
氮化镓HEMT和LED的集成
氮化镓新型声光电器件
氮化镓光电融合芯片
代表文章
1. Y. Cai*, K. Wu, Z. Ma, S. Zhao and Y. Zhang *, "Integration of large-extinction-ratio resonators with grating couplers and waveguides on GaN-on-sapphire at O-band", Optics Express, 31 (26): 42795- 42806 (2023).
2. Y. Cai, C. Zhu, W. Zhong, P. Feng, S. Jiang and T. Wang*, "Monolithically integrated µLEDs/HEMTs microdisplay on a single chip by a direct epitaxial approach", Advanced Materials Technologies, vol.6, no.6, 2100214(2021). (Featured in Compound Semiconductor and LEDInside )
3. Y. Cai, J. I. Haggar, C. Zhu, P. Feng, J. Bai and T. Wang, "Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single Micro-LED with a high modulation bandwidth", ACS Applied Electronic Materials, vol.3, no.1, pp.445-450 (2021).
4. J. Bai, Y. Cai, P. Feng, P. Fletcher, C. Zhu, Y. Tian, and T. Wang*, "Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width", ACS Nano, vol. 14, no. 6, pp.6906- 6911 (2020). (Featured in Compound Semiconductor)
5. Y. Cai, S. Shen, C. Zhu, X. Zhao, J.Bai and T. Wang, "Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon," ACS Applied Materials & Interfaces, vol. 12, no. 22, pp.25031-25036 (2020).
6. S. Jiang#, Y. Cai#, P. Feng, S. Shen, X. Zhao, P. Flecher, V. Esendag, K. B. Lee and T. Wang*, "Exploring an approach towards the intrinsic limits of GaN electronics," ACS Applied Materials & Interfaces, vol. 12, no. 11, pp.12949-12954 (2020). (#: Co-author with equal contributions)
7. Y. Cai, Y. Gong, J. Bai, X. Yu, C. Zhu, V. Esendag and T. Wang*, "Controllable uniform green light emitters enabled by circular HEMT-LED devices," IEEE Photonics Journal, vol. 10, no. 5, pp.1-7 (2018).
8. Y. Cai, X. Zou, C. Liu, and K. M. Lau*, "Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters," IEEE Electron Device Letters, vol. 39, no.2, pp. 224-227 (2018). (Featured in IEEE Spectrum)
9. Y. Cai, X. Zou, Y. Gao, L. Li, P. K. T. Mok, and K. M. Lau*, "Low-flicker lighting from high-voltage LEDs driven by a single converter-free driver," IEEE Photonics Technology Letters, vol. 29, no.19, pp. 1675-1678 (2017).
10. C. Liu#, Y. F. Cai#, Z. J. Liu, J. Ma, and K. M. Lau*, "Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors," Applied Physics Letters, vol. 106, no.18, pp.181110 (2015). (#: Co-author with equal contributions) (Featured in Semiconductor Today)
